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Get it fast All inventory ready to ship from our sellersMfg Part Number: 648596-912
Alternate P/N: 648596912
NSN : 5962-01-394-4850
NIIN : 013944850
CAGE Code : 37695
Manufacturer: Raytheon Company
Item Name : Microcircuit Memory
If you’re in need of NSN parts, Purchasing Synergy is the ultimate source. As an ASAP Semiconductor company, we have access to a vast and diverse inventory of parts and components for the aerospace, civil aviation, defense, electronics, and industrial markets. This includes parts such as Microcircuit Memory from Raytheon Company, as well as part numbers like 648596-912 and many more. Purchasing Synergy has more than two billion new and obsolete parts readily available with short lead times and competitive prices and, as we are an AS9120B, ISO 9001:2015, and FAA AC 00-56B accredited business, and the only independent distributor with a No China Sourcing Pledge, each part we sell is fully traceable or comes directly from the manufacturer.
Our website offers a range of parametric search capabilities which allow our customers to search for parts through a number of filters, one of which is National Stock Number, or NSN. A National Stock Number is an identifier applied to any item of supply that is repeatedly procured, stocked, stored, issued, and used throughout the federal supply system. Purchasing Synergy has a broad selection of NSN parts such as 5962013944850 from manufacturers like Raytheon Company. To begin the purchasing process immediately, submit an RFQ today.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-394-4850 Item Description: Microcircuit Memory | 5962 | 013944850 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 648596-912 | 5 | 2 | 3 |
| MRC | Criteria | Characteristic |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS" |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS" |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND HIGH RELIABILITY AND BIPOLAR" |
| CQSJ | INCLOSURE MATERIAL | CERAMIC" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE" |
| CZER | MEMORY DEVICE TYPE | PROM" |
| CZES | HYBRID TECHNOLOGY TYPE | MONOLITHIC" |
| FEAT | SPECIAL FEATURES | MADE FROM DESC P/N 8200802JX" |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT" |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS" |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS" |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND HIGH RELIABILITY AND BIPOLAR" |
| CQSJ | INCLOSURE MATERIAL | CERAMIC" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE" |
| CZER | MEMORY DEVICE TYPE | PROM" |
| CZES | HYBRID TECHNOLOGY TYPE | MONOLITHIC" |
| FEAT | SPECIAL FEATURES | MADE FROM DESC P/N 8200802JX" |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT" |
 |
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